Inductorless Multi-Mode RF-CMOS Low Noise Amplifier Dedicated to Ultra Low Power Applications
نویسندگان
چکیده
This work presents and analyses the design of a multi-mode Low Noise Amplifier (LNA) dedicated to 2.4 GHz Wireless Sensor Network (WSN) applications. The proposed inductorless LNA, implemented in 28 nm FDSOI CMOS technology, is based on common-gate configuration imbedded with common-source stage boost overall transconductance circuit. LNA specifically designed, optimized, address three modes operation. reconfiguration performed through current tuning, combined switching back gate amplification transistors. implementation allows figure merit (FOM) be maintained constant different In low power mode, only consumes 350 uW. It achieves voltage gain (G v ) 16.8 dB noise (NF) 6.6 dB. medium performance NF are respectively improved 19.4 5.4 dB, consumption 0.9 mW. high-performance maximum, 22.9 minimum, 3.6 for 2 linearity represented by input referred third-order intercept point (IIP3) constant, close -16 dBm. reported occupies 0.0015 mm 2 .
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ژورنال
عنوان ژورنال: IEEE Access
سال: 2021
ISSN: ['2169-3536']
DOI: https://doi.org/10.1109/access.2021.3085990